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6-inch Silicon Carbide High-Temperature Oxidation Furnace
Function
Technical Parameters

Bhadra? Vertical High-Temperature Oxidation Furnace HBO150

Advantage

High temperature oxidation process
DCE cleaning removes mobile ion action and medium&high temperature annealing process

Consultation

or call:

86-18924169069 / 020-31569374

Technical Parameters

Wafer size : 4 and 6 inches

Substrate material : Silicon Carbide (SiC)

Maximum wafer capacity: 50 wafers per batch

Applicable fields: Power semiconductors, substrate materials, research

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